onsemi Single Bipolar Transistors FJP13007H1TU

Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067229-FJP13007H1TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 2A, 8A
Typical Gain (hFE) (Min): 15 @ 2A, 5V
Maximum Power Dissipation: 80W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 50

NPN BJT Transistor | 400V VCEO | 8A IC | TO-220 | 4MHz Product overview: FJP13007H1TU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 8A, 4MHz, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 8A, 4MHz, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJP13007H1TU can be used for catalog matching and distributor lookup.