onsemi Single Bipolar Transistors FJP13007H1TU

Description
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3
  • Single Bipolar Transistors - FJP13007H1TU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - FJP13007H1TU - 067229-FJP13007H1TU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP13007H1TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3
Request a Quote Datasheet

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Single Bipolar Transistors - FJP13007H1TU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJP13007H1TU-ND
Single Bipolar Transistors FJP13007H1TU-ND
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJP13007H1TU - 067229-FJP13007H1TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJP13007H1TU
067229-FJP13007H1TU
TRANSISTORS - Transistors (BJT) - Single - FJP13007H1TU 067229-FJP13007H1TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067229-FJP13007H1TU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 2A, 8A Typical Gain (hFE) (Min): 15 @ 2A, 5V Maximum Power Dissipation: 80W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067229-FJP13007H1TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 2A, 8A
Typical Gain (hFE) (Min): 15 @ 2A, 5V
Maximum Power Dissipation: 80W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJP13007H1TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJP13007H1TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJP13007H1TU
TRANS NPN 400V 8A TO220-3

TRANS NPN 400V 8A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FJP13007H1TU-ND 067229-FJP13007H1TU FJP13007H1TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJP13007H1TU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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