onsemi Single, Pre-Biased Bipolar Transistors FJN4303RTA

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - FJN4303RTATB-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJN4303RTATB-ND
Single, Pre-Biased Bipolar Transistors FJN4303RTATB-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN4303RTA - 1038937-FJN4303RTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN4303RTA
1038937-FJN4303RTA
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN4303RTA 1038937-FJN4303RTA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038937-FJN4303RTA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038937-FJN4303RTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJN4303RTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJN4303RTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJN4303RTA
TRANS PREBIAS PNP 50V TO92-3

TRANS PREBIAS PNP 50V TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FJN4303RTATB-ND 1038937-FJN4303RTA FJN4303RTA
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN4303RTA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased
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