onsemi Single, Pre-Biased Bipolar Transistors FJN3303RBU

Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - FJN3303RBU-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
FJN3303RBU-ND
Single, Pre-Biased Bipolar Transistors FJN3303RBU-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN3303RBU - 067228-FJN3303RBU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN3303RBU
067228-FJN3303RBU
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN3303RBU 067228-FJN3303RBU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067228-FJN3303RBU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 56 @ 5mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067228-FJN3303RBU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 56 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
300MW Bipolar Transistor
292-FJN3303RBU
300MW Bipolar Transistor 292-FJN3303RBU
TRANS PREBIAS NPN 300MW TO92-3 Product overview: FJN3303RBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300MW. Search-friendly keywords include transistor, BJT, switching, amplification, 300MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-FJN3303RBU can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 300MW TO92-3 Product overview: FJN3303RBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300MW. Search-friendly keywords include transistor, BJT, switching, amplification, 300MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-FJN3303RBU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJN3303RBU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJN3303RBU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJN3303RBU
TRANS PREBIAS NPN 50V TO92-3

TRANS PREBIAS NPN 50V TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJN3303RBU-ND 067228-FJN3303RBU 292-FJN3303RBU FJN3303RBU
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - FJN3303RBU 300MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Pre-Biased NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3; TO-92-3
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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