onsemi Single Bipolar Transistors FJN3301RTA

Description
Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300mW Through Hole TO-92-3
  • Single Bipolar Transistors - FJN3301RTATB-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - FJN3301RTA - 714245-FJN3301RTA - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJN3301RTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - FJN3301RTATB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJN3301RTATB-ND
Single Bipolar Transistors FJN3301RTATB-ND
Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 300mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJN3301RTA - 714245-FJN3301RTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJN3301RTA
714245-FJN3301RTA
TRANSISTORS - Transistors (BJT) - Single - FJN3301RTA 714245-FJN3301RTA
Manufacturer: ON Semiconductor Win Source Part Number: 714245-FJN3301RTA Packaging: Cut Tape (CT) Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 250MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 10mA, 5V Maximum Power: 300mW

Manufacturer: ON Semiconductor
Win Source Part Number: 714245-FJN3301RTA
Packaging: Cut Tape (CT)
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 250MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Low
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 20 at 10mA, 5V
Maximum Power: 300mW

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJN3301RTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJN3301RTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJN3301RTA
TRANS NPN 50V 0.1A TO92-3

TRANS NPN 50V 0.1A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FJN3301RTATB-ND 714245-FJN3301RTA FJN3301RTA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJN3301RTA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Unlock Full Specs
to access all available technical data