onsemi Single Bipolar Transistors FJN13003TA

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 1.1W Through Hole TO-92-3

NPN BJT Transistor 400V 1.5A TO-92 Through Hole Product overview: FJN13003TA from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 400V, 1.5A. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 400V, 1.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-FJN13003TA can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774593-FJN13003TA
Packaging: Tape in Box
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Power - Max: 1.1W
Transistor Type: NPN
Frequency - Transition: 4MHz
Part Status: Obsolete(EOL)
Family Name: FJN13003
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92-3
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 9 @ 500mA, 2V
Alternative Parts (Cross-Reference): MJE13003G-B-T9N-R; MJE13003L-D-T9N-R; MJE13003G-C-T9N-R; MJE13003G-F-T9N-R;
Introduction Date: July 11, 2001
ECCN: EAR99
Country of Origin: China, India, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance