onsemi Single Bipolar Transistors FJE3303TU

Description
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
  • Single Bipolar Transistors - FJE3303TU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - FJE3303TU - 1038929-FJE3303TU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJE3303TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - FJE3303TU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJE3303TU-ND
Single Bipolar Transistors FJE3303TU-ND
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJE3303TU - 1038929-FJE3303TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJE3303TU
1038929-FJE3303TU
TRANSISTORS - Transistors (BJT) - Single - FJE3303TU 1038929-FJE3303TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038929-FJE3303TU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 500mA, 1.5A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 8 @ 500mA, 2V Maximum Power Dissipation: 20W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038929-FJE3303TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 500mA, 1.5A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 8 @ 500mA, 2V
Maximum Power Dissipation: 20W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJE3303TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJE3303TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJE3303TU
TRANS NPN 400V 1.5A TO126-3

TRANS NPN 400V 1.5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FJE3303TU-ND 1038929-FJE3303TU FJE3303TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJE3303TU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Unlock Full Specs
to access all available technical data