onsemi Single Bipolar Transistors FJD3076TF

Description
Bipolar (BJT) Transistor NPN 32V 2A 100MHz 1W Surface Mount D-Pak
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 32V 2A 100MHz 1W Surface Mount D-Pak
Request a Quote Datasheet

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Single Bipolar Transistors - FJD3076TF-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
FJD3076TF-ND
Single Bipolar Transistors FJD3076TF-ND
Bipolar (BJT) Transistor NPN 32V 2A 100MHz 1W Surface Mount D-Pak

Bipolar (BJT) Transistor NPN 32V 2A 100MHz 1W Surface Mount D-Pak

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - FJD3076TF - 774591-FJD3076TF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FJD3076TF
774591-FJD3076TF
TRANSISTORS - Transistors (BJT) - Single - FJD3076TF 774591-FJD3076TF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774591-FJD3076TF Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Power - Max: 1W Transistor Type: NPN Frequency - Transition: 100MHz Part Status: Obsolete(EOL) Family Name: FJD3076 Categories: Discrete Semiconductor Products Manufacturer Package: D-Pak Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 32V Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 1μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 130 @ 500mA, 3V Alternative Parts (Cross-Reference): 2SD1758QTL; 2SD1758RTL; 2SD1758Q; 2SD1758P; Introduction Date: December 10, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774591-FJD3076TF
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 1W
Transistor Type: NPN
Frequency - Transition: 100MHz
Part Status: Obsolete(EOL)
Family Name: FJD3076
Categories: Discrete Semiconductor Products
Manufacturer Package: D-Pak
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 32V
Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 130 @ 500mA, 3V
Alternative Parts (Cross-Reference): 2SD1758QTL; 2SD1758RTL; 2SD1758Q; 2SD1758P;
Introduction Date: December 10, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FJD3076TF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FJD3076TF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FJD3076TF
TRANS NPN 32V 2A DPAK

TRANS NPN 32V 2A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number FJD3076TF-ND 774591-FJD3076TF FJD3076TF
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - FJD3076TF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK)
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR)
IC(max) 1.00E-3 milliamps 2000 milliamps
Power Gain 130 dB
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