DIODE SIL CARB 650V 15A TO220-2L
Win Source Part Number: 1059064-FFSP1065A
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single
Speed: No Recovery Time > 500mA (Io)
Package: Tube
Standard Package: 50
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080
Mfr: onsemi
Other Names: 2156-FFSP1065A-488,F
Base Product Number: FFSP1065
Diode Silicon Carbide Schottky 650V 15A (DC) Through Hole TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220-2L Silicon Carbide (SiC) Schottky Diode ? EliteSiC, 10 A, 650 V, D1, TO-220-2L
SIC SCHOTTKY DIODE, 650V, 10A, TO-220-2; Product Range:-; Diode Configuration:Single
DIODE SIL CARB 650V 15A TO220-2L
Schottky Diodes & Rectifiers SIC TO220 SBD 10A 650V
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Rochester Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Diodes | Schottky Diodes | Diodes | Schottky Diodes | Schottky Diodes | Rectifiers | Schottky Diodes |
| Product Number | FFSP1065A | 1059064-FFSP1065A | 5556-FFSP1065A-ND | FFSP1065A | 48AC1685 | FFSP1065A | FFSP1065A |
| Product Name | Single Diodes | Discrete Semiconductor Products - Diodes - Rectifiers - Single | Single Diodes | Sic Schottky Diode, 650V, 10A, To-220-2; Product Range Onsemi | Discrete Semiconductor Products - Diodes - Rectifiers | Schottky Diodes & Rectifiers | |
| VF | 1.75 volts | 1.75 volts | 1.75 volts | ||||
| VR | 650 volts | ||||||
| IR | 0.2000 mA | ||||||
| trr | 0.0 ns | 0.0 ns |