onsemi Single Diodes FFSD1065A

The FFSD1065A is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. It features a maximum reverse voltage of 650 V and a continuous rectified forward current rating of 10 A at a case temperature of 25¬8C. The diode exhibits no reverse recovery current, which enhances its efficiency and allows for faster switching, making it suitable for applications such as switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS). The device has a maximum junction temperature of 175¬8C and is avalanche rated for 64 mJ, providing robust performance under high-stress conditions. It also supports high surge current capacity, with a non-repetitive peak forward surge current of 760 A at 25¬8C. The forward voltage drop is specified at a maximum of 1.75 V at 10 A, and the reverse leakage current is limited to 200 ¬µA at 650 V. The FFSD1065A is packaged in a DPAK (TO-252) format, making it suitable for surface mount applications. It is RoHS compliant and free from lead and halogens, aligning with modern environmental standards. This diode is ideal for engineers looking for a reliable and efficient component for high-frequency and high-density power applications.