The FFSB10120A is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. It features a maximum junction temperature of 175¬8C and is avalanche rated for 100 mJ, making it suitable for demanding environments. The diode supports a continuous rectified forward current of 10 A at a case temperature of 164¬8C and can handle non-repetitive peak forward surge currents up to 850 A at 25¬8C. With a peak repetitive reverse voltage rating of 1200 V, the FFSB10120A exhibits no reverse recovery current and has temperature-independent switching characteristics, which contribute to its high efficiency and reduced electromagnetic interference (EMI). The device is packaged in a D2PAK2 (TO-263-2L) format, is RoHS compliant, and is suitable for applications such as switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS). Engineers considering this diode should note its high surge current capacity and ease of paralleling, which enhance its versatility in power switching circuits.
Diode Silicon Carbide Schottky 1200V 21A (DC) Surface Mount D²PAK-3 (TO-263-3)
DIODE SIL CARB 1200V 21A TO263
DIODE SIL CARB 1200V 21A TO263
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, D2PAK-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, D2PAK-2L
Manufacturer: ON Semiconductor
Win Source Part Number: 871740-FFSB10120A
Features: Diode Silicon Carbide Schottky 1200 V 21A (DC) Surface Mount D²PAK-3 (TO-263-3)
Speed: No Recovery Time > 500mA (Io)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: FFSB10120
Categories: Discrete Semiconductor Products
Case / Package: D²PAK-3 (TO-263-3)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 32 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080
DIODE SIL CARB 1.2KV 21A D2PAK-3
SiC Diode, 1200V, 10A, D2PAK, 800-REEL Product overview: FFSB10120A from onsemi is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 10A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1200V, 10A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-FFSB10120A can be used for catalog matching and distributor lookup.
DIODE SIL CARB 1.2KV 21A D2PAK-3
Schottky Diodes & Rectifiers SIC TO263 SBD 10A 1 200V
| DigiKey | Rochester Electronics | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Diodes | Schottky Diodes | Schottky Diodes | Diodes | Rectifiers | Rectifiers | Schottky Diodes |
| Product Number | 5556-FFSB10120ATR-ND | FFSB10120A | 871740-FFSB10120A | FFSB10120A | 280-FFSB10120A | FFSB10120A | FFSB10120A |
| Product Name | Single Diodes | Diodes, Rectifiers - Single - FFSB10120A | Single Diodes | 1200V 10A Diode and Rectifier | Discrete Semiconductor Products - Diodes - Rectifiers | Schottky Diodes & Rectifiers | |
| Tj | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | |||||
| Life Cycle Stage | Active | Active | |||||
| Package | D2PAK; D2PAK2 (TO-263-2L) | D²PAK-3 (TO-263-3) | D2PAK | TO-263-3 | |||
| VF | 1.75 volts | 1.75 volts |
