onsemi TRANSISTORS - Transistors (BJT) - Arrays - FFB5551 FFB5551

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016251-FFB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Family Name: FFB5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): MMDT5551-TP-HF; MMDT5551-T; MMDT5551-13; MMDT5551-TP; Introduction Date: June 03, 2003 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016251-FFB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Family Name: FFB5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): MMDT5551-TP-HF; MMDT5551-T; MMDT5551-13; MMDT5551-TP; Introduction Date: June 03, 2003 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - FFB5551 - 016251-FFB5551 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - FFB5551
016251-FFB5551
TRANSISTORS - Transistors (BJT) - Arrays - FFB5551 016251-FFB5551
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016251-FFB5551 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Family Name: FFB5551 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 50nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 200mW Alternative Parts (Cross-Reference): MMDT5551-TP-HF; MMDT5551-T; MMDT5551-13; MMDT5551-TP; Introduction Date: June 03, 2003 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016251-FFB5551
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 2 NPN (Dual)
Family Name: FFB5551
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 200mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): MMDT5551-TP-HF; MMDT5551-T; MMDT5551-13; MMDT5551-TP;
Introduction Date: June 03, 2003
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Bipolar Transistor Arrays - FFB5551 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
FFB5551
Bipolar Transistor Arrays FFB5551
TRANS 2NPN 160V 0.2A SC70-6

TRANS 2NPN 160V 0.2A SC70-6

Supplier's Site Datasheet
Bipolar Transistor Arrays - FFB5551TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FFB5551TR-ND
Bipolar Transistor Arrays FFB5551TR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Bipolar Transistor Arrays - FFB5551DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FFB5551DKR-ND
Bipolar Transistor Arrays FFB5551DKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Bipolar Transistor Arrays - FFB5551CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FFB5551CT-ND
Bipolar Transistor Arrays FFB5551CT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Singapore
Bipolar Transistor
2087-FFB5551
Bipolar Transistor 2087-FFB5551
Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE Product overview: FFB5551 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FFB5551 can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE Product overview: FFB5551 from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-FFB5551 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FFB5551 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FFB5551
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FFB5551
TRANS 2NPN 160V 0.2A SC70-6

TRANS 2NPN 160V 0.2A SC70-6

Supplier's Site
Trans, Dual Npn, 160V, 0.2A, 0.2W Rohs Compliant Onsemi - 54AH8679 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Npn, 160V, 0.2A, 0.2W Rohs Compliant Onsemi
54AH8679
Trans, Dual Npn, 160V, 0.2A, 0.2W Rohs Compliant Onsemi 54AH8679
TRANS, DUAL NPN, 160V, 0.2A, 0.2W ROHS COMPLIANT: YES

TRANS, DUAL NPN, 160V, 0.2A, 0.2W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
FFB5551
Bipolar Transistors - BJT FFB5551
Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE

Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 016251-FFB5551 FFB5551 FFB5551TR-ND 2087-FFB5551 FFB5551 54AH8679 FFB5551
Product Name TRANSISTORS - Transistors (BJT) - Arrays - FFB5551 Bipolar Transistor Arrays Bipolar Transistor Arrays Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Dual Npn, 160V, 0.2A, 0.2W Rohs Compliant Onsemi Bipolar Transistors - BJT
Polarity 2 NPN (Dual); NPN 2 NPN (Dual); NPN NPN NPN NPN
Package Type SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 Reel TO-3
Packing Method Tape Reel; Reel - TR Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 200 milliamps 200 milliamps 200 milliamps 200 milliamps
VCEO 160 volts 160 volts 160 volts
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