onsemi Bipolar Transistor Arrays FFB2222A

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 500mA 300MHz 300mW Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 500mA 300MHz 300mW Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - FFB2222ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
FFB2222ATR-ND
Bipolar Transistor Arrays FFB2222ATR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 500mA 300MHz 300mW Surface Mount SC-88 (SC-70-6)

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 500mA 300MHz 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - FFB2222A - 016247-FFB2222A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - FFB2222A
016247-FFB2222A
TRANSISTORS - Transistors (BJT) - Arrays - FFB2222A 016247-FFB2222A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016247-FFB2222A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016247-FFB2222A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FFB2222A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FFB2222A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FFB2222A
TRANS 2NPN 40V 0.5A SC70-6

TRANS 2NPN 40V 0.5A SC70-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number FFB2222ATR-ND 016247-FFB2222A FFB2222A
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - FFB2222A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 2 NPN (Dual)
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