onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ5047N FDZ5047N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067137-FDZ5047N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 36-BGA (5.5x5) Dimension: 36-VFBGA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 22A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 73nC @ 5V Max Input Capacitance: 4993pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.9 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067137-FDZ5047N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 36-BGA (5.5x5) Dimension: 36-VFBGA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 22A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 73nC @ 5V Max Input Capacitance: 4993pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.9 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ5047N - 067137-FDZ5047N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ5047N
067137-FDZ5047N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ5047N 067137-FDZ5047N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067137-FDZ5047N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 36-BGA (5.5x5) Dimension: 36-VFBGA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 22A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 73nC @ 5V Max Input Capacitance: 4993pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.9 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067137-FDZ5047N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 36-BGA (5.5x5)
Dimension: 36-VFBGA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 73nC @ 5V
Max Input Capacitance: 4993pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.9 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDZ5047N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDZ5047N
MOSFET N-CH 30V 22A 36BGA

MOSFET N-CH 30V 22A 36BGA

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 067137-FDZ5047N FDZ5047N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ5047N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2800 milliwatts
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