MOSFET N-CH 20V 600MA SC89-3
N-CH MOSFET 20V 0.6A SOT-523FL 300mR Product overview: FDY302NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDY302NZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016226-FDY302NZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.1nC @ 4.5V
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 300 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount SC-89-3
MOSFET N-CH 20V 600MA SC89-3
MOSFET, N-CH, 20V, 0.6A, SOT-523; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:625mW; No. of Pins:3Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDY302NZ | 278-FDY302NZ | 016226-FDY302NZ | FDY302NZTR-ND | FDY302NZ | 27AC5727 |
| Product Name | Single FETs, MOSFETs | 20V 0.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY302NZ | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.6A, Sot-523; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 600 milliamps | 600 milliamps |
