onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY301NZ FDY301NZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001153-FDY301NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Family Name: FDY301NZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.1nC @ 4.5V Max Input Capacitance: 60pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Alternative Parts (Cross-Reference): Si1032X-T1; Si1032X; SI1032X-T1-GE3; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001153-FDY301NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Family Name: FDY301NZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.1nC @ 4.5V Max Input Capacitance: 60pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Alternative Parts (Cross-Reference): Si1032X-T1; Si1032X; SI1032X-T1-GE3; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY301NZ - 001153-FDY301NZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY301NZ
001153-FDY301NZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY301NZ 001153-FDY301NZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001153-FDY301NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Family Name: FDY301NZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 200mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.1nC @ 4.5V Max Input Capacitance: 60pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Alternative Parts (Cross-Reference): Si1032X-T1; Si1032X; SI1032X-T1-GE3; Introduction Date: January 00, 1900 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001153-FDY301NZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Family Name: FDY301NZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.1nC @ 4.5V
Max Input Capacitance: 60pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): Si1032X-T1; Si1032X; SI1032X-T1-GE3;
Introduction Date: January 00, 1900
ECCN: EAR99
Country of Origin: Israel, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDY301NZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDY301NZ
Single FETs, MOSFETs FDY301NZ
MOSFET N-CH 20V 200MA SC89-3

MOSFET N-CH 20V 200MA SC89-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FDY301NZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDY301NZ
Single FETs, MOSFETs FDY301NZ
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet
Singapore
N-Channel SMD 20V 200mA MOSFET Transistor
278-FDY301NZ
N-Channel SMD 20V 200mA MOSFET Transistor 278-FDY301NZ
N-Channel JFET, 20V, 200mA, 5R, SC Package, Surface Mount Product overview: FDY301NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 200mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 200mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDY301NZ can be used for catalog matching and distributor lookup.

N-Channel JFET, 20V, 200mA, 5R, SC Package, Surface Mount Product overview: FDY301NZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 200mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 200mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDY301NZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDY301NZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDY301NZCT-ND
Single FETs, MOSFETs FDY301NZCT-ND
N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - FDY301NZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDY301NZDKR-ND
Single FETs, MOSFETs FDY301NZDKR-ND
N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - FDY301NZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDY301NZTR-ND
Single FETs, MOSFETs FDY301NZTR-ND
N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDY301NZ
MOSFET FDY301NZ
MOSFET 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET

MOSFET 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET

Buy Now Datasheet
Mosfet, N, Smd, Sc89; Channel Type Onsemi - 61M6361 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Smd, Sc89; Channel Type Onsemi
61M6361
Mosfet, N, Smd, Sc89; Channel Type Onsemi 61M6361
MOSFET, N, SMD, SC89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N, SMD, SC89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDY301NZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDY301NZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDY301NZ
MOSFET N-CH 20V 200MA SC89-3

MOSFET N-CH 20V 200MA SC89-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001153-FDY301NZ FDY301NZ 278-FDY301NZ FDY301NZCT-ND FDY301NZ 61M6361 FDY301NZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY301NZ Single FETs, MOSFETs N-Channel SMD 20V 200mA MOSFET Transistor Single FETs, MOSFETs MOSFET Mosfet, N, Smd, Sc89; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 625 milliwatts 625 milliwatts 625 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Unlock Full Specs
to access all available technical data