onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY2001PZ FDY2001PZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040275-FDY2001PZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 446mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 150mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.4nC @ 4.5V Max Input Capacitance: 100pF @ 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 150mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040275-FDY2001PZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 446mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 150mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.4nC @ 4.5V Max Input Capacitance: 100pF @ 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 150mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY2001PZ - 040275-FDY2001PZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY2001PZ
040275-FDY2001PZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY2001PZ 040275-FDY2001PZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040275-FDY2001PZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 446mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 150mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 1.4nC @ 4.5V Max Input Capacitance: 100pF @ 10V Maximum Rds On at Id,Vgs: 8 Ohm @ 150mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040275-FDY2001PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 446mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 150mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.4nC @ 4.5V
Max Input Capacitance: 100pF @ 10V
Maximum Rds On at Id,Vgs: 8 Ohm @ 150mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDY2001PZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDY2001PZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDY2001PZ
MOSFET 2P-CH 20V 0.15A SOT563F

MOSFET 2P-CH 20V 0.15A SOT563F

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 040275-FDY2001PZ FDY2001PZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY2001PZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 446 milliwatts
Unlock Full Specs
to access all available technical data