MOSFET 2P-CH 20V 830MA SOT563F
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067130-FDY1002PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 446mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 830mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.1nC @ 4.5V
Max Input Capacitance: 135pF @ 10V
Maximum Rds On at Id,Vgs: 500 mOhm @ 830mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Mosfet Array 2 P-Channel (Dual) 20V 830mA 446mW Surface Mount SOT-563F
Mosfet Array 2 P-Channel (Dual) 20V 830mA 446mW Surface Mount SOT-563F
Mosfet Array 2 P-Channel (Dual) 20V 830mA 446mW Surface Mount SOT-563F
MOSFET 2P-CH 20V 830MA SOT563F
MOSFET, DUAL P-CH, -20V, -0.83A, SC-89-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:-20V; Continuous Drain Current Id:-830mA; On Resistance Rds(on):0.28ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-4.5V RoHS Compliant: Yes
MOSFET -20V DUAL P-CHAN POWERTRENCH
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDY1002PZ | 067130-FDY1002PZ | FDY1002PZTR-ND | FDY1002PZ | 46AC0814 | FDY1002PZ |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY1002PZ | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual P-Ch, -20V, -0.83A, Sc-89-6; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 830 milliamps | -830 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
