onsemi Single FETs, MOSFETs FDW254P

Description
P-Channel 20V 9.2A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP
Request a Quote Datasheet
Description
P-Channel 20V 9.2A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDW254P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDW254P-ND
Single FETs, MOSFETs FDW254P-ND
P-Channel 20V 9.2A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP

P-Channel 20V 9.2A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW254P - 120778-FDW254P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW254P
120778-FDW254P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW254P 120778-FDW254P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 120778-FDW254P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 9.2A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 96nC @ 4.5V Max Input Capacitance: 5878pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 12 mOhm @ 9.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 120778-FDW254P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 96nC @ 4.5V
Max Input Capacitance: 5878pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 12 mOhm @ 9.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDW254P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDW254P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDW254P
MOSFET P-CH 20V 9.2A 8TSSOP

MOSFET P-CH 20V 9.2A 8TSSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDW254P-ND 120778-FDW254P FDW254P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW254P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-TSSOP (0.173"", 4.40mm Width)" SOT3; 8-TSSOP 8-TSSOP (0.173, 4.40mm Width)
V(BR)DSS 20 volts
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