onsemi FET, MOSFET Arrays FDW2508PB

Description
Mosfet Array 2 P-Channel (Dual) 12V 6A 1W Surface Mount 8-TSSOP
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 12V 6A 1W Surface Mount 8-TSSOP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - FDW2508PBTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDW2508PBTR-ND
FET, MOSFET Arrays FDW2508PBTR-ND
Mosfet Array 2 P-Channel (Dual) 12V 6A 1W Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 12V 6A 1W Surface Mount 8-TSSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2508PB - 128638-FDW2508PB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2508PB
128638-FDW2508PB
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2508PB 128638-FDW2508PB
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 128638-FDW2508PB Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 45nC @ 4.5V Max Input Capacitance: 3775pF @ 6V Maximum Rds On at Id,Vgs: 18 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): SI6913DQ-T1-E3; AO8807L; FDW2508PB; FDW2508P; Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 128638-FDW2508PB
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 45nC @ 4.5V
Max Input Capacitance: 3775pF @ 6V
Maximum Rds On at Id,Vgs: 18 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): SI6913DQ-T1-E3; AO8807L; FDW2508PB; FDW2508P;
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDW2508PB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDW2508PB
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDW2508PB
MOSFET 2P-CH 12V 6A 8TSSOP

MOSFET 2P-CH 12V 6A 8TSSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDW2508PBTR-ND 128638-FDW2508PB FDW2508PB
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2508PB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-TSSOP (0.173"", 4.40mm Width)" SOT3; 8-TSSOP
Polarity P-Channel
V(BR)DSS 12 volts
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