onsemi FET, MOSFET Arrays FDW2506P

Description
SMALL SIGNAL P-CHANNEL MOSFET
Request a Quote Datasheet
Description
SMALL SIGNAL P-CHANNEL MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDW2506P - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDW2506P
FET, MOSFET Arrays FDW2506P
SMALL SIGNAL P-CHANNEL MOSFET

SMALL SIGNAL P-CHANNEL MOSFET

Supplier's Site Datasheet
FET, MOSFET Arrays - FDW2506P - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDW2506P
FET, MOSFET Arrays FDW2506P
MOSFET 2P-CH 20V 5.3A 8-TSSO

MOSFET 2P-CH 20V 5.3A 8-TSSO

Supplier's Site Datasheet
FET, MOSFET Arrays - FDW2506P-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDW2506P-ND
FET, MOSFET Arrays FDW2506P-ND
Mosfet Array 2 P-Channel (Dual) 20V 5.3A 600mW Surface Mount 8-TSSOP

Mosfet Array 2 P-Channel (Dual) 20V 5.3A 600mW Surface Mount 8-TSSOP

Buy Now Datasheet
Singapore
20V 5.3A TSSOP MOSFET Transistor
289-FDW2506P
20V 5.3A TSSOP MOSFET Transistor 289-FDW2506P
2P-CH MOSFET 20V 5.3A 22mR P-CH TSSOP Product overview: FDW2506P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, TSSOP, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDW2506P can be used for catalog matching and distributor lookup.

2P-CH MOSFET 20V 5.3A 22mR P-CH TSSOP Product overview: FDW2506P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.3A, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.3A, TSSOP, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDW2506P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2506P - 067120-FDW2506P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2506P
067120-FDW2506P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2506P 067120-FDW2506P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067120-FDW2506P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Maximum Power Dissipation: 600mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5.3A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 34nC @ 4.5V Max Input Capacitance: 1015pF @ 10V Maximum Rds On at Id,Vgs: 22 mOhm @ 5.3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067120-FDW2506P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Maximum Power Dissipation: 600mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 34nC @ 4.5V
Max Input Capacitance: 1015pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 5.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDW2506P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDW2506P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDW2506P
MOSFET 2P-CH 20V 5.3A 8TSSOP

MOSFET 2P-CH 20V 5.3A 8TSSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDW2506P FDW2506P-ND 289-FDW2506P 067120-FDW2506P FDW2506P
Product Name FET, MOSFET Arrays FET, MOSFET Arrays 20V 5.3A TSSOP MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW2506P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 5300 milliamps
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