onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N FDV301N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001149-FDV301N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Family Name: FDV301N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA (Ta) Gate-Source Threshold Voltage: 1.06V @ 250μA Max Gate Charge: 0.7nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): DMG301NU-13; DMG301NU-7; FDV301N_D87Z; Introduction Date: May 17, 1999 ECCN: EAR99 Country of Origin: China, Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N - 001149-FDV301N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDV301NTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDV301NDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDV301NCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDV301N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 25V, 220Ma Sot-23; Channel Type Onsemi - 58K8856 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, Full Reel; Channel Type Onsemi - 67R2086 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001149-FDV301N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Family Name: FDV301N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA (Ta) Gate-Source Threshold Voltage: 1.06V @ 250μA Max Gate Charge: 0.7nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): DMG301NU-13; DMG301NU-7; FDV301N_D87Z; Introduction Date: May 17, 1999 ECCN: EAR99 Country of Origin: China, Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N - 001149-FDV301N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N
001149-FDV301N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N 001149-FDV301N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001149-FDV301N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Family Name: FDV301N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA (Ta) Gate-Source Threshold Voltage: 1.06V @ 250μA Max Gate Charge: 0.7nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V Alternative Parts (Cross-Reference): DMG301NU-13; DMG301NU-7; FDV301N_D87Z; Introduction Date: May 17, 1999 ECCN: EAR99 Country of Origin: China, Israel, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001149-FDV301N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: FDV301N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA (Ta)
Gate-Source Threshold Voltage: 1.06V @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): DMG301NU-13; DMG301NU-7; FDV301N_D87Z;
Introduction Date: May 17, 1999
ECCN: EAR99
Country of Origin: China, Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial

Buy Now Datasheet
Single FETs, MOSFETs - FDV301NTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDV301NTR-ND
Single FETs, MOSFETs FDV301NTR-ND
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDV301NDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDV301NDKR-ND
Single FETs, MOSFETs FDV301NDKR-ND
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - FDV301NCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDV301NCT-ND
Single FETs, MOSFETs FDV301NCT-ND
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDV301N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDV301N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDV301N
MOSFET N-CH 25V 220MA SOT23

MOSFET N-CH 25V 220MA SOT23

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDV301N
Triode/MOS Tube/Transistor >> MOSFETs FDV301N
25V 220mA 4Ω@4.5V,400mA 350mW 1.06V@250uA N Channel SOT-23 MOSFETs ROHS

25V 220mA 4Ω@4.5V,400mA 350mW 1.06V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDV301N
MOSFET FDV301N
MOSFET N-Ch Digital

MOSFET N-Ch Digital

Buy Now Datasheet
N Channel Mosfet, 25V, 220Ma Sot-23; Channel Type Onsemi - 58K8856 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 25V, 220Ma Sot-23; Channel Type Onsemi
58K8856
N Channel Mosfet, 25V, 220Ma Sot-23; Channel Type Onsemi 58K8856
N CHANNEL MOSFET, 25V, 220mA SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:220mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV RoHS Compliant: Yes

N CHANNEL MOSFET, 25V, 220mA SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:220mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV RoHS Compliant: Yes

Supplier's Site
Mosfet, Full Reel; Channel Type Onsemi - 67R2086 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2086
Mosfet, Full Reel; Channel Type Onsemi 67R2086
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:220mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:220mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:850mV; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001149-FDV301N FDV301NTR-ND FDV301N FDV301N FDV301N 58K8856 67R2086
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV301N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET N Channel Mosfet, 25V, 220Ma Sot-23; Channel Type Onsemi Mosfet, Full Reel; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23 SOT23; TO-236-3, SC-59, SOT-23-3 0.7 nC @ 4.5 V SOT23 TO-3; SOT23 TO-3
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