onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882 FDU8882

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067116-FDU8882 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1260pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882 - 067116-FDU8882 - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 30V 55A I-PAK - 598-FDU8882 - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067116-FDU8882 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1260pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Suppliers

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Product
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882 - 067116-FDU8882 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882
067116-FDU8882
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882 067116-FDU8882
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067116-FDU8882 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1260pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067116-FDU8882
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1260pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-CH 30V 55A I-PAK - 598-FDU8882 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 55A I-PAK
598-FDU8882
MOSFET N-CH 30V 55A I-PAK 598-FDU8882
MOSFET N-CH 30V 55A I-PAK

MOSFET N-CH 30V 55A I-PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067116-FDU8882 598-FDU8882
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8882 MOSFET N-CH 30V 55A I-PAK
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 55000 milliwatts 55000 milliwatts
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