onsemi Single FETs, MOSFETs FDU8880

Description
N-Channel 30V 13A (Ta), 58A (Tc) 55W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 30V 13A (Ta), 58A (Tc) 55W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDU8880-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDU8880-ND
Single FETs, MOSFETs FDU8880-ND
N-Channel 30V 13A (Ta), 58A (Tc) 55W (Tc) Through Hole I-PAK

N-Channel 30V 13A (Ta), 58A (Tc) 55W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8880 - 067115-FDU8880 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8880
067115-FDU8880
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8880 067115-FDU8880
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067115-FDU8880 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-251 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1260pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067115-FDU8880
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1260pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 13A 58A MOSFET Transistor
278-FDU8880
30V 13A 58A MOSFET Transistor 278-FDU8880
MOSFET N-CH 30V 13A/58A IPAK Product overview: FDU8880 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU8880 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 13A/58A IPAK Product overview: FDU8880 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU8880 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU8880 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU8880
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU8880
MOSFET N-CH 30V 13A/58A IPAK

MOSFET N-CH 30V 13A/58A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDU8880-ND 067115-FDU8880 278-FDU8880 FDU8880
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8880 30V 13A 58A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251 Tube TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 30 volts
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