Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038482-FDU8586
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 77W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2480pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 35A IPAK
MOSFET N-CH 20V 35A I-PAK
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038482-FDU8586 | FDU8586 | 598-FDU8586 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8586 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 20V 35A I-PAK |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 20 volts | ||
| PD | 77000 milliwatts | 77000 milliwatts |
