onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8580 FDU8580

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038481-FDU8580
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 49.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-251AA
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1445pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

N-Channel 20V 35A (Tc) 49.5W (Tc) Through Hole I-PAK

MOSFET N-CH 20V 35A IPAK Product overview: FDU8580 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU8580 can be used for catalog matching and distributor lookup.