onsemi 600V 5.5A MOSFET Transistor FDU7N60NZTU

600V N-CH MOSFET, 5.5A, TO-251 (IPAK) Product overview: FDU7N60NZTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU7N60NZTU can be used for catalog matching and distributor lookup.

N-Channel 600V 5.5A (Tc) 90W (Tc) Through Hole I-PAK

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173936-FDU7N60NZTU
Series: UniFET-II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Family Name: FDU7N60NZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 730pF @ 25V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 90W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.25 Ohm @ 2.75A, 10V
Alternative Parts (Cross-Reference): TSM6N60CH C5G; AOI4C60; STU5N62K3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040