onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6N25 FDU6N25

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038477-FDU6N25
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5,040

N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole I-PAK

POWER FIELD-EFFECT TRANSISTOR, 4 Product overview: FDU6N25 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU6N25 can be used for catalog matching and distributor lookup.