onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS FDU6676AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038475-FDU6676AS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2470pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038475-FDU6676AS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2470pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS - 1038475-FDU6676AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS
1038475-FDU6676AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS 1038475-FDU6676AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038475-FDU6676AS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2470pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038475-FDU6676AS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2470pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET N-CH 30V 90A IPAK - 598-FDU6676AS - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 90A IPAK
598-FDU6676AS
MOSFET N-CH 30V 90A IPAK 598-FDU6676AS
MOSFET N-CH 30V 90A IPAK

MOSFET N-CH 30V 90A IPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU6676AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU6676AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU6676AS
MOSFET N-CH 30V 90A IPAK

MOSFET N-CH 30V 90A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038475-FDU6676AS 598-FDU6676AS FDU6676AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS MOSFET N-CH 30V 90A IPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 70000 milliwatts 70000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2805S - 1149778-AUIRF2805S - Win Source Electronics
Specs
Package Type SOT3
View Details
4 suppliers
GaAs Fet Switches - KS205 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details