onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6676AS FDU6676AS

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038475-FDU6676AS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2470pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 90A IPAK Product overview: FDU6676AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU6676AS can be used for catalog matching and distributor lookup.