onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6612A FDU6612A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038474-FDU6612A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.4nC @ 5V Max Input Capacitance: 660pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038474-FDU6612A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.4nC @ 5V Max Input Capacitance: 660pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6612A - 1038474-FDU6612A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6612A
1038474-FDU6612A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6612A 1038474-FDU6612A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038474-FDU6612A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 36W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9.4nC @ 5V Max Input Capacitance: 660pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038474-FDU6612A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.5A (Ta), 30A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9.4nC @ 5V
Max Input Capacitance: 660pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU6612A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU6612A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU6612A
MOSFET N-CH 30V 9.5A/30A IPAK

MOSFET N-CH 30V 9.5A/30A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038474-FDU6612A FDU6612A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6612A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 2800 to 36000 milliwatts
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