onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A FDU6512A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067112-FDU6512A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1082pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067112-FDU6512A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1082pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A - 067112-FDU6512A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A
067112-FDU6512A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A 067112-FDU6512A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067112-FDU6512A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1082pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067112-FDU6512A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1082pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
20V 10.7A 36A MOSFET Transistor
278-FDU6512A
20V 10.7A 36A MOSFET Transistor 278-FDU6512A
MOSFET N-CH 20V 10.7A/36A IPAK Product overview: FDU6512A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.7A, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.7A, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU6512A can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 10.7A/36A IPAK Product overview: FDU6512A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.7A, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.7A, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU6512A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDU6512A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDU6512A-ND
Single FETs, MOSFETs FDU6512A-ND
N-Channel 20V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK

N-Channel 20V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU6512A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU6512A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU6512A
MOSFET N-CH 20V 10.7A/36A IPAK

MOSFET N-CH 20V 10.7A/36A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067112-FDU6512A 278-FDU6512A FDU6512A-ND FDU6512A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A 20V 10.7A 36A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 3800 to 43000 milliwatts 3800 milliwatts
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