onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6512A FDU6512A

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067112-FDU6512A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.7A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1082pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 21 mOhm @ 10.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

MOSFET N-CH 20V 10.7A/36A IPAK Product overview: FDU6512A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10.7A, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10.7A, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU6512A can be used for catalog matching and distributor lookup.

N-Channel 20V 10.7A (Ta), 36A (Tc) 3.8W (Ta), 43W (Tc) Through Hole I-PAK