MOSFET N-CH 80V 7.7A IPAK Product overview: FDU3580 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 7.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 7.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDU3580 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038470-FDU3580
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 7.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 79nC @ 10V
Max Input Capacitance: 1760pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 7.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 80V 7.7A IPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-FDU3580 | 1038470-FDU3580 | FDU3580 |
| Product Name | 80V 7.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU3580 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3800 milliwatts | 3800 to 42000 milliwatts | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | Tube | SOT3; IPAK (TO-251) | 1760 pF @ 40 V |