onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 FDT86256

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038468-FDT86256 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 73pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 - 1038468-FDT86256 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDT86256 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDT86256TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDT86256CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDT86256DKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT86256 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi - 07AH3948 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038468-FDT86256 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 73pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 - 1038468-FDT86256 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256
1038468-FDT86256
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 1038468-FDT86256
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038468-FDT86256 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 73pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038468-FDT86256
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 73pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDT86256
Single FETs, MOSFETs FDT86256
MOSFET N-CH 150V 1.2A/3A SOT223

MOSFET N-CH 150V 1.2A/3A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - FDT86256TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256TR-ND
Single FETs, MOSFETs FDT86256TR-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256CT-ND
Single FETs, MOSFETs FDT86256CT-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256DKR-ND
Single FETs, MOSFETs FDT86256DKR-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDT86256
MOSFET FDT86256
MOSFET 150V NCh MOSFET PowerTrench

MOSFET 150V NCh MOSFET PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT86256 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT86256
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT86256
MOSFET N-CH 150V 1.2A/3A SOT223

MOSFET N-CH 150V 1.2A/3A SOT223

Supplier's Site
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi - 07AH3948 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi
07AH3948
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi 07AH3948
MOSFET, N-CH, 150V, 3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.695ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 150V, 3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.695ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038468-FDT86256 FDT86256 FDT86256TR-ND FDT86256 FDT86256 07AH3948
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
PD 2300 to 10000 milliwatts 2300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-223-4 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-261-4, TO-261AA TO-3; SOT223
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