onsemi Single FETs, MOSFETs FDT86256

Description
MOSFET N-CH 150V 1.2A/3A SOT223
Request a Quote Datasheet
Description
MOSFET N-CH 150V 1.2A/3A SOT223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDT86256 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDT86256
Single FETs, MOSFETs FDT86256
MOSFET N-CH 150V 1.2A/3A SOT223

MOSFET N-CH 150V 1.2A/3A SOT223

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 - 1038468-FDT86256 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256
1038468-FDT86256
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 1038468-FDT86256
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038468-FDT86256 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 2nC @ 10V Max Input Capacitance: 73pF @ 75V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038468-FDT86256
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.2A (Ta), 3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2nC @ 10V
Max Input Capacitance: 73pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 845 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256TR-ND
Single FETs, MOSFETs FDT86256TR-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256CT-ND
Single FETs, MOSFETs FDT86256CT-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86256DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86256DKR-ND
Single FETs, MOSFETs FDT86256DKR-ND
N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDT86256
MOSFET FDT86256
MOSFET 150V NCh MOSFET PowerTrench

MOSFET 150V NCh MOSFET PowerTrench

Buy Now Datasheet
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi - 07AH3948 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi
07AH3948
Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi 07AH3948
MOSFET, N-CH, 150V, 3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.695ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 150V, 3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.695ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT86256 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT86256
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT86256
MOSFET N-CH 150V 1.2A/3A SOT223

MOSFET N-CH 150V 1.2A/3A SOT223

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDT86256 1038468-FDT86256 FDT86256TR-ND FDT86256 07AH3948 FDT86256
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86256 Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 150V, 3A, Sot-223; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts 150 volts
IDSS 1200 milliamps 3000 milliamps
PD 2300 milliwatts 2300 to 10000 milliwatts
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