MOSFET N-CH 150V 2A SOT223-4
N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4
N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4
N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-223-4
MOSFETs 150V 2A N-Channel Power Trench MOSFET Product overview: FDT86246L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDT86246L can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038467-FDT86246L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.3nC @ 10V
Max Input Capacitance: 335pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 228 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
MOSFET, N-CH, 150V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET 150V 2A N-Channel Power Trench MOSFET
MOSFET N-CH 150V 2A SOT223-4
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDT86246L | FDT86246LTR-ND | 2088-FDT86246L | 1038467-FDT86246L | 07AH3947 | FDT86246L | FDT86246L |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 150V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86246L | Mosfet, N-Ch, 150V, 2A, Sot-223; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| IDSS | 2000 milliamps | 2000 milliamps | |||||
| PD | 1000 milliwatts | 2.2 milliwatts | 1000 milliwatts |