onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86106LZ FDT86106LZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016218-FDT86106LZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta) Family Name: FDT86106LZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 315pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 108 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): ZXMN10A25GTA; ZXMN10A25G; PHT6NQ10T T/R; PHT6NQ10T,135; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016218-FDT86106LZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta) Family Name: FDT86106LZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 315pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 108 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): ZXMN10A25GTA; ZXMN10A25G; PHT6NQ10T T/R; PHT6NQ10T,135; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86106LZ - 016218-FDT86106LZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86106LZ
016218-FDT86106LZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86106LZ 016218-FDT86106LZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016218-FDT86106LZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.2W (Ta) Family Name: FDT86106LZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 315pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 108 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): ZXMN10A25GTA; ZXMN10A25G; PHT6NQ10T T/R; PHT6NQ10T,135; Introduction Date: July 28, 2006 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016218-FDT86106LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.2W (Ta)
Family Name: FDT86106LZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 315pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 108 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): ZXMN10A25GTA; ZXMN10A25G; PHT6NQ10T T/R; PHT6NQ10T,135;
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 4k pcs

Buy Now Datasheet
Singapore
N-Channel 100V MOSFET Transistor
2088-FDT86106LZ
N-Channel 100V MOSFET Transistor 2088-FDT86106LZ
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDT86106LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDT86106LZ can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDT86106LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDT86106LZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDT86106LZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86106LZDKR-ND
Single FETs, MOSFETs FDT86106LZDKR-ND
N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86106LZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86106LZTR-ND
Single FETs, MOSFETs FDT86106LZTR-ND
N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT86106LZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT86106LZCT-ND
Single FETs, MOSFETs FDT86106LZCT-ND
N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT86106LZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT86106LZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT86106LZ
MOSFET N-CH 100V 3.2A SOT223-4

MOSFET N-CH 100V 3.2A SOT223-4

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-Channel PowerTrench MOSFET

MOSFET 100V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016218-FDT86106LZ 2088-FDT86106LZ FDT86106LZDKR-ND FDT86106LZ FDT86106LZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86106LZ N-Channel 100V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 2200 milliwatts 2.2 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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