N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
MOSFET N-CH 100V 6.6A SOT223-4
MOSFETs 100V N-Channel PowerTrench MOSFET Product overview: FDT86102LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDT86102LZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173932-FDT86102LZ
Series: PowerTrench
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-261-4, TO-261AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Family Name: FDT86102LZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: SOT-223-4
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1490pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.2W (Ta)
Rds On (Maximum) @ Id, Vgs: 28 mOhm @ 6.6A, 10V
Introduction Date: July 28, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 4k pcs
MOSFET N-Channel 100V 6.6A SOT223
MOSFET, N-CH, 100V, 6.6A, 150DEG C, 2.2W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:2.2W RoHS Compliant: Yes
MOSFET N-CH 100V 6.6A SOT223-4
MOSFET 100V N-Channel PowerTrench MOSFET
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDT86102LZFSDKR-ND | FDT86102LZ | 2088-FDT86102LZ | 1173932-FDT86102LZ | 7599194 | 7599194P | 88T3368 | FDT86102LZ | FDT86102LZ |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT86102LZ | MOSFETs | MOSFETs | Mosfet, N-Ch, 100V, 6.6A, 150Deg C, 2.2W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | Reel | SOT3 | SOT223; Sot-223 | SOT223; SOT-223 | TO-3 | TO-261-4, TO-261AA | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | ||||||||
| IDSS | 6600 milliamps | 6600 milliamps |
