onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 FDT55AN06LA0

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038462-FDT55AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 8.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 1130pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038462-FDT55AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 8.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 1130pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Suppliers

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Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 - 1038462-FDT55AN06LA0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0
1038462-FDT55AN06LA0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 1038462-FDT55AN06LA0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038462-FDT55AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 8.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 1130pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038462-FDT55AN06LA0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 1130pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDT55AN06LA0TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT55AN06LA0TR-ND
Single FETs, MOSFETs FDT55AN06LA0TR-ND
N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4

N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT55AN06LA0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT55AN06LA0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT55AN06LA0
MOSFET N-CH 60V 12.1A SOT223-4

MOSFET N-CH 60V 12.1A SOT223-4

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038462-FDT55AN06LA0 FDT55AN06LA0TR-ND FDT55AN06LA0
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 8900 milliwatts
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