onsemi Single FETs, MOSFETs FDT55AN06LA0

Description
N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4
Request a Quote Datasheet
Description
N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDT55AN06LA0TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT55AN06LA0TR-ND
Single FETs, MOSFETs FDT55AN06LA0TR-ND
N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4

N-Channel 60V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4

Buy Now Datasheet
Singapore
60V 12.1A MOSFET Transistor
278-FDT55AN06LA0
60V 12.1A MOSFET Transistor 278-FDT55AN06LA0
MOSFET N-CH 60V 12.1A SOT223-4 Product overview: FDT55AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDT55AN06LA0 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 12.1A SOT223-4 Product overview: FDT55AN06LA0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDT55AN06LA0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 - 1038462-FDT55AN06LA0 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0
1038462-FDT55AN06LA0
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 1038462-FDT55AN06LA0
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038462-FDT55AN06LA0 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 8.9W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 1130pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038462-FDT55AN06LA0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.9W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 1130pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 46 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT55AN06LA0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT55AN06LA0
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT55AN06LA0
MOSFET N-CH 60V 12.1A SOT223-4

MOSFET N-CH 60V 12.1A SOT223-4

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDT55AN06LA0TR-ND 278-FDT55AN06LA0 1038462-FDT55AN06LA0 FDT55AN06LA0
Product Name Single FETs, MOSFETs 60V 12.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT55AN06LA0 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223-4 TO-261-4, TO-261AA
PD 8900 milliwatts 8900 milliwatts
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