onsemi Single FETs, MOSFETs FDT459N

Description
N-Channel 30V 6.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Request a Quote Datasheet
Description
N-Channel 30V 6.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDT459NFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT459NFSTR-ND
Single FETs, MOSFETs FDT459NFSTR-ND
N-Channel 30V 6.5A (Ta) 3W (Ta) Surface Mount SOT-223-4

N-Channel 30V 6.5A (Ta) 3W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT459N - 1038460-FDT459N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT459N
1038460-FDT459N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT459N 1038460-FDT459N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038460-FDT459N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 365pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038460-FDT459N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 365pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT459N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT459N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT459N
MOSFET N-CH 30V 6.5A SOT223-4

MOSFET N-CH 30V 6.5A SOT223-4

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDT459N
MOSFET FDT459N
MOSFET SOT-223 N-CH 30V

MOSFET SOT-223 N-CH 30V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDT459NFSTR-ND 1038460-FDT459N FDT459N FDT459N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT459N Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223-4 TO-261-4, TO-261AA
V(BR)DSS 30 volts
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