Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016217-FDT458P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.5nC @ 10V
Max Input Capacitance: 205pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
P-Channel 30V 3.4A (Ta) 3W (Ta) Surface Mount SOT-223-4
P-Channel 30V 3.4A (Ta) 3W (Ta) Surface Mount SOT-223-4
P-Channel 30V 3.4A (Ta) 3W (Ta) Surface Mount SOT-223-4
MOSFET P-CH 30V 3.4A SOT223-4
MOSFET P-CH 30V 3.4A SOT223-4
MOSFET Transistor, P Channel, 3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 3.4A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, 3.4A, SOT-223-3; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016217-FDT458P | 6710788P | 1661834 | FDT458PDKR-ND | FDT458P | FDT458P | FDT458P | 47T5053 | 82C2589 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT458P | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 3.4 A, -30 V, 0.105 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, 3.4A, Sot-223; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 3000 milliwatts | 3000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; SOT-223-4 | SOT223; SOT-223 | SOT223; Sot-223 | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3 | TO-3; SOT223 |
