onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT434P FDT434P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 139499-FDT434P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDT434P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1187pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): Si8411DB-T1-E1; Si8411DB-E3; Si8411DB; Introduction Date: February 17, 2000 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control Quantity per package: 4k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 139499-FDT434P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDT434P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1187pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): Si8411DB-T1-E1; Si8411DB-E3; Si8411DB; Introduction Date: February 17, 2000 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control Quantity per package: 4k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT434P - 139499-FDT434P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT434P
139499-FDT434P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT434P 139499-FDT434P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 139499-FDT434P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDT434P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 19nC @ 4.5V Max Input Capacitance: 1187pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 50 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): Si8411DB-T1-E1; Si8411DB-E3; Si8411DB; Introduction Date: February 17, 2000 ECCN: EAR99 Country of Origin: Israel, Republic of Korea Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control Quantity per package: 4k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 139499-FDT434P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: FDT434P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1187pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 50 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): Si8411DB-T1-E1; Si8411DB-E3; Si8411DB;
Introduction Date: February 17, 2000
ECCN: EAR99
Country of Origin: Israel, Republic of Korea
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Alternative Energy, Motor Drive & Control
Quantity per package: 4k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDT434PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDT434PTR-ND
Single FETs, MOSFETs FDT434PTR-ND
P-Channel 20V 6A (Ta) 3W (Ta) Surface Mount SOT-223-4

P-Channel 20V 6A (Ta) 3W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
Single FETs, MOSFETs - FDT434P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDT434P
Single FETs, MOSFETs FDT434P
MOSFET P-CH 20V 6A SOT223-4

MOSFET P-CH 20V 6A SOT223-4

Supplier's Site
Single FETs, MOSFETs - FDT434P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDT434P
Single FETs, MOSFETs FDT434P
6A, 20V, 0.05OHM, P-CHANNEL, MO

6A, 20V, 0.05OHM, P-CHANNEL, MO

Supplier's Site
P Channel Mosfet, -20V, 6A, Sot-223; Channel Type Onsemi - 38C7187 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 6A, Sot-223; Channel Type Onsemi
38C7187
P Channel Mosfet, -20V, 6A, Sot-223; Channel Type Onsemi 38C7187
P CHANNEL MOSFET, -20V, 6A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 6A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes

Supplier's Site
Mosfet, Full Reel; Channel Type Onsemi - 67R2084 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2084
Mosfet, Full Reel; Channel Type Onsemi 67R2084
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi - 47T5052 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi
47T5052
Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi 47T5052
MOSFET Transistor, P Channel, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDT434P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDT434P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDT434P
MOSFET P-CH 20V 6A SOT223-4

MOSFET P-CH 20V 6A SOT223-4

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 139499-FDT434P FDT434PTR-ND FDT434P 38C7187 67R2084 47T5052 FDT434P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDT434P Single FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, -20V, 6A, Sot-223; Channel Type Onsemi Mosfet, Full Reel; Channel Type Onsemi Mosfet Transistor, P Channel, 6 A, -20 V, 0.04 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 3000 milliwatts 3000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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3 suppliers