MOSFET 2P-CH 60V 2.9A 8-SO
Mosfet Array 2 P-Channel (Dual) 60V 2.9A 900mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 60V 2.9A 900mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 60V 2.9A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038443-FDS9958
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1020pF @ 30V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P CHANNEL MOSFET, -60V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.082ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2P-CH 60V 2.9A 8SOIC
MOSFET -60V Dual P-Channel PowerTrench
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS9958 | FDS9958CT-ND | 1038443-FDS9958 | 78M0965 | FDS9958 | FDS9958 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9958 | P Channel Mosfet, -60V, Soic, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 2900 milliamps | 2900 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
