Dual P-Channel MOSFET, 30V, -2.9A, 130mΩ, SOIC, Tape & Reel Product overview: FDS9953A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 30V, -2.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, -2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS9953A can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 007653-FDS9953A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.5nC @ 10V
Max Input Capacitance: 185pF @ 15V
Maximum Rds On at Id,Vgs: 130 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
MOSFET 2P-CH 30V 2.9A 8SOIC
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.13OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY
Dual MOSFET, Dual P Channel, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 2.9mA, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.095ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-FDS9953A | FDS9953ATR-ND | 007653-FDS9953A | FDS9953A | 21491292 | 31Y1413 | 82C2588 | FDS9953A |
| Product Name | P-Channel Dual 30V -2.9A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9953A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Dual Mosfet, Dual P Channel, -2.9 A, -30 V, 0.095 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, 2.9Ma, Full Reel; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| PD | 900 milliwatts | 900 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | TO-3 |
