onsemi FET, MOSFET Arrays FDS9953A

Description
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Surface Mount 8-SOIC
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Description
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS9953ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS9953ATR-ND
FET, MOSFET Arrays FDS9953ATR-ND
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 30V 2.9A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9953A - 007653-FDS9953A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9953A
007653-FDS9953A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9953A 007653-FDS9953A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 007653-FDS9953A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 3.5nC @ 10V Max Input Capacitance: 185pF @ 15V Maximum Rds On at Id,Vgs: 130 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 007653-FDS9953A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.5nC @ 10V
Max Input Capacitance: 185pF @ 15V
Maximum Rds On at Id,Vgs: 130 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500

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Transistor - 21491292 - Radwell International
Willingboro, NJ, United States
Transistor
21491292
Transistor 21491292
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.13OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 30V, 0.13OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Dual Mosfet, Dual P Channel, -2.9 A, -30 V, 0.095 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi - 31Y1413 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual P Channel, -2.9 A, -30 V, 0.095 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi
31Y1413
Dual Mosfet, Dual P Channel, -2.9 A, -30 V, 0.095 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi 31Y1413
Dual MOSFET, Dual P Channel, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V RoHS Compliant: Yes

Dual MOSFET, Dual P Channel, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -30V, 2.9Ma, Full Reel; Transistor Polarity Onsemi - 82C2588 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 2.9Ma, Full Reel; Transistor Polarity Onsemi
82C2588
P Channel Mosfet, -30V, 2.9Ma, Full Reel; Transistor Polarity Onsemi 82C2588
P CHANNEL MOSFET, -30V, 2.9mA, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.095ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 2.9mA, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.9A; On Resistance Rds(on):0.095ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS9953A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS9953A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS9953A
MOSFET 2P-CH 30V 2.9A 8SOIC

MOSFET 2P-CH 30V 2.9A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS9953A
MOSFET FDS9953A
MOSFET SO-8

MOSFET SO-8

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Technical Specifications

  DigiKey Win Source Electronics Radwell International Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS9953ATR-ND 007653-FDS9953A 21491292 31Y1413 82C2588 FDS9953A FDS9953A
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9953A Transistor Dual Mosfet, Dual P Channel, -2.9 A, -30 V, 0.095 Ohm, -10 V, -1.8 V Rohs Compliant Onsemi P Channel Mosfet, -30V, 2.9Ma, Full Reel; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO TO-3 TO-3
Polarity P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 900 milliwatts
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