MOSFET P-CH 30V 5.3A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 007645-FDS9435A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 528pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 5.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
MOSFETs SO-8 SGL P-CH -30V Product overview: FDS9435A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS9435A can be used for catalog matching and distributor lookup.
P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 5.3A 8-SOIC
MOSFET P-CH 30V 5.3A 8SOIC
P CHANNEL MOSFET, -30V, 5.3A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET Transistor, P Channel, 5.3 A, 30 V, 0.042 ohm, -10 V, -1.7 V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS9435A | 007645-FDS9435A | 6710750 | 6710750P | 2088-FDS9435A | FDS9435ATR-ND | 598-FDS9435A | FDS9435A | FDS9435A | 38C7185 | 88M3281 | 91K9832 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9435A | MOSFETs | MOSFETs | -30V MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 30V 5.3A 8-SOIC | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 5.3A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Mosfet Transistor, P Channel, 5.3 A, 30 V, 0.042 Ohm, -10 V, -1.7 V Rohs Compliant Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||||
| V(BR)DSS | 30 volts | 30 volts | -30 volts | |||||||||
| IDSS | 5300 milliamps | 5300 milliamps | 5300 milliamps | |||||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts |
