30V Dual N & P-Channel PowerTrench® MOSFET, SO 8L NB, 5000-TAPE REEL Product overview: FDS8962C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS8962C can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 126818-FDS8962C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A, 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 575pF @ 15V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
MOSFET N/P-CH 30V 7A/5A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-FDS8962C | 126818-FDS8962C | FDS8962CTR-ND | FDS8962C |
| Product Name | P-Channel Dual 30V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8962C | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |