onsemi FET, MOSFET Arrays FDS8962C

Description
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS8962CTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8962CTR-ND
FET, MOSFET Arrays FDS8962CTR-ND
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Singapore, Singapore
P-Channel Dual 30V MOSFET Transistor
289-FDS8962C
P-Channel Dual 30V MOSFET Transistor 289-FDS8962C
30V Dual N & P-Channel PowerTrench® MOSFET, SO 8L NB, 5000-TAPE REEL Product overview: FDS8962C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS8962C can be used for catalog matching and distributor lookup.

30V Dual N & P-Channel PowerTrench® MOSFET, SO 8L NB, 5000-TAPE REEL Product overview: FDS8962C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS8962C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8962C - 126818-FDS8962C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8962C
126818-FDS8962C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8962C 126818-FDS8962C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 126818-FDS8962C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7A, 5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 575pF @ 15V Maximum Rds On at Id,Vgs: 30 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 126818-FDS8962C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A, 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 575pF @ 15V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8962C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8962C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8962C
MOSFET N/P-CH 30V 7A/5A 8SOIC

MOSFET N/P-CH 30V 7A/5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS8962CTR-ND 289-FDS8962C 126818-FDS8962C FDS8962C
Product Name FET, MOSFET Arrays P-Channel Dual 30V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8962C Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity P-Channel P-Channel
PD 900 milliwatts 900 milliwatts
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