onsemi Single FETs, MOSFETs FDS8960C

Description
DUAL N & P-CHANNEL POWERTRENCH M
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Description
DUAL N & P-CHANNEL POWERTRENCH M
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS8960C - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS8960C
Single FETs, MOSFETs FDS8960C
DUAL N & P-CHANNEL POWERTRENCH M

DUAL N & P-CHANNEL POWERTRENCH M

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS8960CTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8960CTR-ND
FET, MOSFET Arrays FDS8960CTR-ND
Mosfet Array N and P-Channel 35V 7A, 5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 35V 7A, 5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8960C
016205-FDS8960C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8960C 016205-FDS8960C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016205-FDS8960C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: FDS8960C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 35V Continuous Drain Current at 25°C: 7A, 5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 7.7nC @ 5V Max Input Capacitance: 570pF @ 15V Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): AP4511GM-HF; FDS4897C; Introduction Date: September 07, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016205-FDS8960C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS8960C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 7A, 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.7nC @ 5V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): AP4511GM-HF; FDS4897C;
Introduction Date: September 07, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS8960C FDS8960CTR-ND 016205-FDS8960C
Product Name Single FETs, MOSFETs FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8960C
Polarity P-Channel; N and P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 35 volts 35 volts
IDSS 7000 milliamps
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