onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8960C FDS8960C

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016205-FDS8960C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS8960C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 7A, 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.7nC @ 5V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): AP4511GM-HF; FDS4897C;
Introduction Date: September 07, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500

Dual N/P-Ch MOSFET 35V 7A 24mR SOIC Product overview: FDS8960C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 35V, 7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 35V, 7A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS8960C can be used for catalog matching and distributor lookup.

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