Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016205-FDS8960C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS8960C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 7A, 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.7nC @ 5V
Max Input Capacitance: 570pF @ 15V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): AP4511GM-HF; FDS4897C;
Introduction Date: September 07, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
Mosfet Array N and P-Channel 35V 7A, 5A 900mW Surface Mount 8-SOIC
DUAL N & P-CHANNEL POWERTRENCH M
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016205-FDS8960C | FDS8960CTR-ND | FDS8960C |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8960C | FET, MOSFET Arrays | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel | |
| V(BR)DSS | 35 volts | 35 volts | |
| PD | 900 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |