onsemi FET, MOSFET Arrays FDS8958B

Description
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS8958BDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8958BDKR-ND
FET, MOSFET Arrays FDS8958BDKR-ND
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS8958BTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8958BTR-ND
FET, MOSFET Arrays FDS8958BTR-ND
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS8958BCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8958BCT-ND
FET, MOSFET Arrays FDS8958BCT-ND
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS8958B - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS8958B
FET, MOSFET Arrays FDS8958B
MOSFET N/P-CH 30V 6.4/4.5A 8SOIC

MOSFET N/P-CH 30V 6.4/4.5A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8958B - 132265-FDS8958B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8958B
132265-FDS8958B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8958B 132265-FDS8958B
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132265-FDS8958B Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.4A, 4.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 540pF @ 15V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.4A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132265-FDS8958B
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A, 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 540pF @ 15V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 2,500

Buy Now Datasheet
Singapore
Dual 30V 6.4A MOSFET Transistor
2088-FDS8958B
Dual 30V 6.4A MOSFET Transistor 2088-FDS8958B
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench Product overview: FDS8958B from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 6.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8958B can be used for catalog matching and distributor lookup.

MOSFETs 30V 6.4A Dual N&P Ch PowerTrench Product overview: FDS8958B from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 6.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8958B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 8063674P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8063674P
MOSFETs 8063674P
MOSFET, Fairchild, FDS8958B

MOSFET, Fairchild, FDS8958B

Supplier's Site
MOSFETs - 8063674 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8063674
MOSFETs 8063674
MOSFET, Fairchild, FDS8958B

MOSFET, Fairchild, FDS8958B

Supplier's Site
MOSFETs - 1663211 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1663211
MOSFETs 1663211
MOSFET, Fairchild, FDS8958B

MOSFET, Fairchild, FDS8958B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS8958B
MOSFET FDS8958B
MOSFET 30V 6.4A Dual N&P Ch PowerTrench

MOSFET 30V 6.4A Dual N&P Ch PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8958B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8958B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8958B
MOSFET N/P-CH 30V 6.4A 8SOIC

MOSFET N/P-CH 30V 6.4A 8SOIC

Supplier's Site
Mosfet, N & P Ch, 130V, 6.4A, Soic-8; Transistor Polarity Onsemi - 31Y1411 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Ch, 130V, 6.4A, Soic-8; Transistor Polarity Onsemi
31Y1411
Mosfet, N & P Ch, 130V, 6.4A, Soic-8; Transistor Polarity Onsemi 31Y1411
MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.4A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.4A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS8958BDKR-ND FDS8958B 132265-FDS8958B 2088-FDS8958B 8063674P 8063674 FDS8958B FDS8958B 31Y1411
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8958B Dual 30V 6.4A MOSFET Transistor MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N & P Ch, 130V, 6.4A, Soic-8; Transistor Polarity Onsemi
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO Reel SOIC Soic TO-3
Polarity P-Channel; N and P-Channel P-Channel N-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 6400 milliamps 6400 milliamps
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