Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132265-FDS8958B
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.4A, 4.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 540pF @ 15V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 2,500
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
Mosfet Array N and P-Channel 30V 6.4A, 4.5A 900mW Surface Mount 8-SOIC
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench Product overview: FDS8958B from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 6.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 6.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8958B can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 6.4A 8SOIC
MOSFET N/P-CH 30V 6.4/4.5A 8SOIC
MOSFET 30V 6.4A Dual N&P Ch PowerTrench
MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity:Complementa
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 132265-FDS8958B | FDS8958BDKR-ND | 2088-FDS8958B | 8063674P | 8063674 | FDS8958B | FDS8958B | FDS8958B | 31Y1411 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8958B | FET, MOSFET Arrays | Dual 30V 6.4A MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET | Mosfet, N & P Ch, 130V, 6.4A, Soic-8; Transistor Polarity Onsemi |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 900 milliwatts | 1.6 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | Reel | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
