MOSFET 2N-CH 40V 6A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 107923-FDS8949
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS8949
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 5V
Max Input Capacitance: 955pF @ 20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): FDS8949-F085; SI4910DY-T1-GE3; Si4942DY; Si4910DY-T1-E3;
Introduction Date: May 26, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC
DUAL N CHANNEL MOSFET, 40V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 6 A, 40 V, 29 mohm, 10 V, 1.9 V RoHS Compliant: Yes
MOSFET 40V 6A 29OHM DUAL NCH LOGIC
40V 6A 2W 29mΩ@10V,6A 3V@250uA 2 N-Channel SO-8-150mil MOSFETs ROHS
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS8949 | 6710747 | 107923-FDS8949 | FDS8949DKR-ND | 76M7885 | 34M6131 | FDS8949 | FDS8949 |
| Product Name | FET, MOSFET Arrays | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949 | FET, MOSFET Arrays | Dual N Channel Mosfet, 40V, Soic; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 6 A, 40 V, 29 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | 40 volts | ||||
| IDSS | 6000 milliamps | 6000 milliamps | 6000 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
