onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949 FDS8949

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 107923-FDS8949 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS8949 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11nC @ 5V Max Input Capacitance: 955pF @ 20V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): FDS8949-F085; SI4910DY-T1-GE3; Si4942DY; Si4910DY-T1-E3; Introduction Date: May 26, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 107923-FDS8949 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS8949 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11nC @ 5V Max Input Capacitance: 955pF @ 20V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): FDS8949-F085; SI4910DY-T1-GE3; Si4942DY; Si4910DY-T1-E3; Introduction Date: May 26, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 2,500
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949 - 107923-FDS8949 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949
107923-FDS8949
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949 107923-FDS8949
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 107923-FDS8949 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS8949 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11nC @ 5V Max Input Capacitance: 955pF @ 20V Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): FDS8949-F085; SI4910DY-T1-GE3; Si4942DY; Si4910DY-T1-E3; Introduction Date: May 26, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 107923-FDS8949
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS8949
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 5V
Max Input Capacitance: 955pF @ 20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): FDS8949-F085; SI4910DY-T1-GE3; Si4942DY; Si4910DY-T1-E3;
Introduction Date: May 26, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
6710747
MOSFETs 6710747
MOSFET N-Channel 40V 6A SOIC8

MOSFET N-Channel 40V 6A SOIC8

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1662630
MOSFETs 1662630
MOSFET N-Channel 40V 6A SOIC8

MOSFET N-Channel 40V 6A SOIC8

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
6710747P
MOSFETs 6710747P
MOSFET N-Channel 40V 6A SOIC8

MOSFET N-Channel 40V 6A SOIC8

Supplier's Site
FET, MOSFET Arrays - FDS8949 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS8949
FET, MOSFET Arrays FDS8949
MOSFET 2N-CH 40V 6A 8SOIC

MOSFET 2N-CH 40V 6A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS8949DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8949DKR-ND
FET, MOSFET Arrays FDS8949DKR-ND
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS8949CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8949CT-ND
FET, MOSFET Arrays FDS8949CT-ND
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS8949TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8949TR-ND
FET, MOSFET Arrays FDS8949TR-ND
Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 40V 6A 2W Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS8949
MOSFET FDS8949
MOSFET 40V 6A 29OHM DUAL NCH LOGIC

MOSFET 40V 6A 29OHM DUAL NCH LOGIC

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
FDS8949
Triode/MOS Tube/Transistor >> MOSFETs FDS8949
40V 6A 2W 29mΩ@10V,6A 3V@250uA 2 N-Channel SO-8-150mil MOSFETs ROHS

40V 6A 2W 29mΩ@10V,6A 3V@250uA 2 N-Channel SO-8-150mil MOSFETs ROHS

Supplier's Site Datasheet
Dual N Channel Mosfet, 40V, Soic; Transistor Polarity Onsemi - 76M7885 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 40V, Soic; Transistor Polarity Onsemi
76M7885
Dual N Channel Mosfet, 40V, Soic; Transistor Polarity Onsemi 76M7885
DUAL N CHANNEL MOSFET, 40V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 40V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes

Supplier's Site
Dual N Channel Mosfet, 40V, Soic, Full Reel; Transistor Polarity Onsemi - 20M1185 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 40V, Soic, Full Reel; Transistor Polarity Onsemi
20M1185
Dual N Channel Mosfet, 40V, Soic, Full Reel; Transistor Polarity Onsemi 20M1185
DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.9V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual Mosfet, Dual N Channel, 6 A, 40 V, 29 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi - 34M6131 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual N Channel, 6 A, 40 V, 29 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi
34M6131
Dual Mosfet, Dual N Channel, 6 A, 40 V, 29 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi 34M6131
Dual MOSFET, Dual N Channel, 6 A, 40 V, 29 mohm, 10 V, 1.9 V RoHS Compliant: Yes

Dual MOSFET, Dual N Channel, 6 A, 40 V, 29 mohm, 10 V, 1.9 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 107923-FDS8949 6710747 FDS8949 FDS8949DKR-ND FDS8949 FDS8949 76M7885 34M6131
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949 MOSFETs FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Triode/MOS Tube/Transistor >> MOSFETs Dual N Channel Mosfet, 40V, Soic; Transistor Polarity Onsemi Dual Mosfet, Dual N Channel, 6 A, 40 V, 29 Mohm, 10 V, 1.9 V Rohs Compliant Onsemi
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel
V(BR)DSS 40 volts 40 volts 40 volts 40 volts
PD 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO SOIC 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" SO-8 TO-3 TO-3
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