Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 971751-FDS8949_F085
Packaging: Tape and Reel
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Number of Elements: 2
Input Capacitance: 955 pF
Power Dissipation: 2 W
Weight: 230.4 mg
Number of Pins: 8
Rise Time: 5 ns
Fall Time: 3 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Dual
Max Power Dissipation: 2 W
Turn-On Delay Time: 9 ns
Continuous Drain Current (ID): 6 A
Drain to Source Breakdown Voltage: 40 V
Turn-Off Delay Time: 23 ns
Drain to Source Resistance: 21 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 29 mΩ
Nominal Vgs: 1.9 V
Threshold Voltage: 1.9 V
MOSFET, DUAL N CHANNEL, 40V, 0.021OHM, 6A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
| Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 971751-FDS8949_F085 | 84W8876 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8949_F085 | Mosfet, Dual N Channel, 40V, 0.021Ohm, 6A, Soic-8; Transistor Polarity Onsemi |
| Package Type | SOT3; SOIC | TO-3 |
| Packing Method | Tape Reel; Tape and Reel | |
| TJ | -55 C (-67 F) | |
| Output Power | ? to 2 watts |
