MOSFET 2P-CH 80V 2.1A 8SOIC
Mosfet Array 2 P-Channel (Dual) 80V 2.1A 1.6W Surface Mount 8-SOIC
MOSFET 2P-CH 80V 2.1A 8SOIC
Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.1A; On Resistance Rds(on):0.148ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.1A; On Resistance Rds(on):0.148ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Transistors |
| Product Number | FDS8935 | FDS8935TR-ND | FDS8935 | 27T6449 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor Polarity Onsemi |
| Polarity | P-Channel; 2 P-Channel (Dual) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 80 volts | |||
| IDSS | 2100 milliamps |
