Dual P-Ch MOSFET -80V, -2.1A, 183mR, SOIC, SMT Product overview: FDS8935 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, -80V, -2.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -80V, -2.1A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS8935 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 80V 2.1A 8SOIC
Mosfet Array 2 P-Channel (Dual) 80V 2.1A 1.6W Surface Mount 8-SOIC
MOSFET 2P-CH 80V 2.1A 8SOIC
Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.1A; On Resistance Rds(on):0.148ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
Transistor Polarity:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:2.1A; On Resistance Rds(on):0.148ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Transistors |
| Product Number | 289-FDS8935 | FDS8935 | FDS8935TR-ND | FDS8935 | 27T6449 |
| Product Name | Dual -80V -2.1A SOIC MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| PD | 3100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 80 volts |
