onsemi FET, MOSFET Arrays FDS8926A

Description
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
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FET, MOSFET Arrays - FDS8926ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS8926ATR-ND
FET, MOSFET Arrays FDS8926ATR-ND
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8926A - 132264-FDS8926A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8926A
132264-FDS8926A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8926A 132264-FDS8926A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 132264-FDS8926A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 28nC @ 4.5V Max Input Capacitance: 900pF @ 10V Maximum Rds On at Id,Vgs: 30 mOhm @ 5.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 132264-FDS8926A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 900pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 5.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8926A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8926A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8926A
MOSFET 2N-CH 30V 5.5A 8SOIC

MOSFET 2N-CH 30V 5.5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS8926ATR-ND 132264-FDS8926A FDS8926A
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8926A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity N-Channel
V(BR)DSS 30 volts
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