The FDS89161LZ is a dual N-Channel Shielded Gate PowerTrench MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 100 V and a continuous drain current rating of 2.7 A. The device exhibits a low on-resistance of 105 mOc at a gate-source voltage of 10 V and a drain current of 2.7 A, making it suitable for efficient power management. It also has a gate-source threshold voltage ranging from 1 V to 2.2 V, which allows for logic-level operation. The MOSFET is packaged in an SO-8 surface mount configuration, facilitating easy integration into various circuit designs. It is RoHS compliant and offers a high level of ESD protection with a CDM rating exceeding 2 kV. The operating temperature range is broad, from -55 ¬8C to +150 ¬8C, ensuring reliability in diverse environments. This component is particularly well-suited for applications such as DC-DC conversion, where efficiency and thermal performance are critical.
MOSFET 2N-CH 100V 2.7A 8SOIC
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016203-FDS89161LZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.6W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.7A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 5.3nC @ 10V
Max Input Capacitance: 302pF @ 50V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFETs PT5 100V Logic Level with Zener Product overview: FDS89161LZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Zener, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Zener, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS89161LZ can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 100V, 2.7A, 150DEG C, 1.6W; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2.7A; On Resistance Rds(on):0.105ohm; Transistor Mounting:Surface Mount; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET PT5 100V Logic Level with Zener
MOSFET 2N-CH 100V 2.7A 8SOIC
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS89161LZ | FDS89161LZTR-ND | 016203-FDS89161LZ | 2088-FDS89161LZ | 46AC0812 | FDS89161LZ | FDS89161LZ |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS89161LZ | Zener 100V MOSFET Transistor | Mosfet, N-Ch, 100V, 2.7A, 150Deg C, 1.6W; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 2700 milliamps | 2700 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
